Charlotte Dewan Adams

2 Patents

• US120684152024

  Precise Bottom Junction Formation for Vertical Transport Field Effect Transistor with Highly Doped Epitaxial Source/drain, Sharp Junction Gradient, And/or Reduced Parasitic Capacitance

  International Business Machines Corporation

  0 cites
• US118880482024

  Gate Oxide for Nanosheet Transistor Devices

  International Business Machines Corporation

  0 cites