Chao-yang Chen

6 Patents

• US124396092025

  Process Technique for Embedded Memory

  HEFEI RELIANCE MEMORY LIMITED

  0 cites
• US123961582025

  Memory Device and Method of Manufacturing the Same

  MEMORIST CO., Ltd.

  0 cites
• US123898142025

  High Electron Affinity Dielectric Layer to Improve Cycling

  Taiwan Semiconductor Manufacturing Company, Ltd.

  0 cites
• US116965212023

  High Electron Affinity Dielectric Layer to Improve Cycling

  Taiwan Semiconductor Manufacturing Company, Ltd.

  0 cites
• US116318102023

  Bottom Electrode Structure in Memory Device

  Taiwan Semiconductor Manufacturing Company, Ltd.

  0 cites
• US115946322023

  Wakeup-free Ferroelectric Memory Device

  Taiwan Semiconductor Manufacturing Company, Ltd.

  0 cites