Patents/Inventors

Chao-i Wu

Hsinchu CountyTW40 patents

37 Patents

US125637362026
Memory Device and Method of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US125139072025
Method of Forming Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US125139092025
Semiconductor Structure Having Memory Device and Method of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US125058712025
Memory Cell and Method of Operating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US124842282025
Semiconductor Chip
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US124531052025
Memory Chiplet Having Multiple Arrays of Memory Devices and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
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US124331782025
PCRAM Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US123744052025
Memory Device Having Interface Charge Traps
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US123568762025
Memory Device and Formation Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US122898922025
Memory Device Structure and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US122010412025
Memory Device Comprising Heater of Different Heat Conducting Materials and Programming Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US121780532024
Memory Device and Method of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US121702652024
Semiconductor Package
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US121677042024
Memory Devices and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US121436122024
Context-based Adaptive Binary Arithmetic Coding Decoder Capable of Decoding Multiple Bins in One Cycle and Associated Decoding Method
MEDIATEK Inc.
0 cites
US121375692024
Memory Device and Method of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US121333902024
Memory Array
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US121145132024
Memory Device and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US121068142024
Method of Testing a Memory Circuit and Memory Circuit
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120698712024
Three-dimensional Memory Device and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US120588672024
Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US120400062024
Memory Array Including Dummy Regions
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US120417812024
Three-dimensional Memory Device with Ferroelectric Material
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US120417932024
Hybrid Memory Device and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US120291432024
Memory Device and Programming Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US119800362024
Semiconductor Structure Having Memory Device and Method of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US119569682024
Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US118958492024
Memory Device and Method of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US118622192024
Memory Cell and Method of Operating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US118495872023
Three-dimensional Memory Device and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US117493702023
Method of Testing a Memory Circuit and Memory Circuit
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US117441652023
Memory Devices and Methods of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US116721262023
Three-dimensional Memory Device and Manufacturing Method Thereof
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US116371262023
Memory Device and Method of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US116160802023
Three-dimensional Memory Device with Ferroelectric Material
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US115879502023
Memory Device and Method of Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US115689122023
Memory Cell and Method of Operating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites