Patents/Inventors

Chanro Park

Clifton Park, NYUS96 patents

100 Patents

US126220372026
Gate Cut Subsequent to Replacement Gate
International Business Machines Corporation
0 cites
US126107532026
Stacked Resistive Random-access Memory Cross-point Cell
International Business Machines Corporation
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US125934572026
Multi-state Ferroelectric-ram with Stacked Capacitors
International Business Machines Corporation
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US125882732026
Stacked Electronic Devices Having Independent Gates
International Business Machines Corporation
0 cites
US125751602026
Backside and Frontside Contacts for Semiconductor Device
International Business Machines Corporation
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US125573592026
Self-aligned Backside Contact with Protruding Source/drain
International Business Machines Corporation
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US125573562026
Semiconductor Structure with Fully Wrapped-around Backside Contact
International Business Machines Corporation
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US125572952026
Embedded Reram with Backside Contact
International Business Machines Corporation
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US125504272026
Vertical Inverter Formation on Stacked Field Effect Transistor (SFET)
International Business Machines Corporation
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US125507082026
Top via Interconnect with an Embedded Antifuse
International Business Machines Corporation
0 cites
US125503382026
Three Dimensional Cross-point Non-volatile Memory
International Business Machines Corporation
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US125503762026
Work Function Metal Patterning and Middle-of-line Self-aligned Contacts for Nanosheet Technology
International Business Machines Corporation
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US125387852026
Fully-aligned and Dielectric Damage-less Top via Interconnect Structure
International Business Machines Corporation
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US125001832025
Support Dielectric Fin to Prevent Gate Flop-over in Nanosheet Transistors
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US125016982025
Stacked Transistors Having Self Aligned Backside Contact with Backside Replacement Metal Gate
International Business Machines Corporation
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US124955872025
Self-aligned Contact (SAC) in Nanosheet Transistors
International Business Machines Corporation
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US124890532025
Interconnect Structure Including Patterned Metal Lines
International Business Machines Corporation
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US124761362025
Liner-less via Contact
International Business Machines Corporation
0 cites
US124531762025
Heterogeneous Gate All Around Dielectric Thickness
International Business Machines Corporation
0 cites
US124462932025
Methods, Apparatus, and Manufacturing System for Self-aligned Patterning of a Vertical Transistor
Globalfoundries U.S. Inc.
0 cites
US124464802025
Top Contact on Resistive Random Access Memory
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US124396312025
Non-self-aligned Wrap-around Contact in a Tight Gate Pitched Transistor
International Business Machines Corporation
0 cites
US124396722025
Semiconductor Backside Contact Structure with Increased Contact Area
International Business Machines Corporation
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US124380472025
Double Patterning with Selectively Deposited Spacer
International Business Machines Corporation
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US124263382025
Buried Power Rail with Robust Connection to a Wrap Around Contact
International Business Machines Corporation
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US124190802025
Semiconductor Structure with Wrapped-around Backside Contact
International Business Machines Corporation
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US124179442025
Formation of Trench Silicide Source or Drain Contacts Without Gate Damage
International Business Machines Corporation
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US124069202025
Top via Interconnect with Airgap
International Business Machines Corporation
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US124023292025
Top via Containing Random-access Memory Cross-bar Array
International Business Machines Corporation
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US124009122025
Dual-damascene Fav Interconnects with Dielectric Plug
International Business Machines Corporation
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US123962252025
Method to Release Nano Sheet After Nano Sheet Fin Recess
International Business Machines Corporation
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US123898132025
Resistive Switching Memory Cell
International Business Machines Corporation
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US123896092025
Circuit Architecture Using Transistors with Dynamic Dual Functionality for Logic and Embedded Memory Drivers
International Business Machines Corporation
0 cites
US123826652025
Increased Gate Length at Given Footprint for Nanosheet Device
International Business Machines Corporation
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US123827082025
Vertical Stacked Nanosheet CMOS Transistors with Different Work Function Metals
International Business Machines Corporation
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US123826622025
Wrap-around-contact for 2d-channel Gate-all-around Field-effect-transistors
International Business Machines Corporation
0 cites
US123694942025
MRAM Top Electrode Structure with Liner Layer
International Business Machines Corporation
0 cites
US123620042025
Scaled 2T DRAM
International Business Machines Corporation
0 cites
US123566382025
Metal-insulator-metal Capacitor Structure with Enlarged Capacitor Area
0 cites
US123411002025
Copper Interconnects with Self-aligned Hourglass-shaped Metal Cap
International Business Machines Corporation
0 cites
US123362792025
Fin Stack Including Tensile-strained and Compressively Strained Fin Portions
International Business Machines Corporation
0 cites
US123289162025
Cpp-agnostic Source-drain Contact Formation for Gate-all-around Devices with Dielectric Isolation
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US123242342025
Fork Sheet Device with Better Electrostatic Control
International Business Machines Corporation
0 cites
US123241972025
Spin-based Gate-all-around Transistors
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US123158072025
Reducing Copper Line Resistance
International Business Machines Corporation
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US123175142025
Resistive Random-access Memory Structures with Stacked Transistors
International Business Machines Corporation
0 cites
US123100612025
Nanosheet Transistor Devices with Different Active Channel Widths
International Business Machines Corporation
0 cites
US123100642025
Isolation Pillar Structures for Stacked Device Structures
International Business Machines Corporation
0 cites
US122610562025
Top via Patterning Using Metal as Hard Mask and via Conductor
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US122437702025
Hard Mask Removal Without Damaging Top Epitaxial Layer
International Business Machines Corporation
0 cites
US122242032025
Air Gap Spacer Formation for Nano-scale Semiconductor Devices
Adeia Semiconductor Solutions LLC
0 cites
US122118482025
Field Effect Transistors Comprising a Matrix of Gate-all-around Channels
International Business Machines Corporation
0 cites
US121837402024
Stacked Field-effect Transistors
International Business Machines Corporation
0 cites
US121763452024
Stacked FET with Independent Gate Control
International Business Machines Corporation
0 cites
US121486172024
Structure and Method to Pattern Pitch Lines
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US121503102024
Ferroelectric Random-access Memory Cell
International Business Machines Corporation
0 cites
US121425622024
Subtractive Metal Etch with Improved Isolation for BEOL Interconnect and Cross Point
International Business Machines Corporation
0 cites
US121070142024
Nanosheet Transistors with Self-aligned Gate Cut
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US120949722024
Gate-all-around Field Effect Transistors Having End Portions of Nanosheet Channel Layers Adjacent to Source/drain Regions Being Wider Than the Center Portions
Globalfoundries U.S. Inc.
0 cites
US120949492024
Fin-type Field Effect Transistor Having a Wrap-around Gate with Bottom Isolation and Inner Spacers to Reduce Parasitic Capacitance
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US120876242024
Beol Tip-to-tip Shorting and Time Dependent Dielectric Breakdown
International Business Machines Corporation
0 cites
US120626092024
Electronic Fuse Structure Embedded in Top Via
International Business Machines Corporation
0 cites
US120573952024
Top via Interconnects Without Barrier Metal Between via and Above Line
International Business Machines Corporation
0 cites
US120466432024
Semiconductor Structures with Power Rail Disposed Under Active Gate
International Business Machines Corporation
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US120274162024
BEOL Etch Stop Layer Without Capacitance Penalty
International Business Machines Corporation
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US120094222024
Self Aligned Top Contact for Vertical Transistor
International Business Machines Corporation
0 cites
US120044352024
Tunable Resistive Random Access Memory Cell
International Business Machines Corporation
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US120044362024
RRAM with High Work Function Cap
International Business Machines Corporation
0 cites
US120028502024
Nanosheet-based Semiconductor Structure with Dielectric Pillar
International Business Machines Corporation
0 cites
US119729772024
Fabrication of Rigid Close-pitch Interconnects
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US119555262024
Thick Gate Oxide Device Option for Nanosheet Device
International Business Machines Corporation
0 cites
US119423742024
Nanosheet Field Effect Transistor with a Source Drain Epitaxy Replacement
International Business Machines Corporation
0 cites
US119375212024
Structure and Method to Fabricate Resistive Memory with Vertical Pre-determined Filament
International Business Machines Corporation
0 cites
US119359302024
Wrap-around-contact for 2d-channel Gate-all-around Field-effect-transistors
International Business Machines Corporation
0 cites
US119233632024
Semiconductor Structure Having Bottom Isolation and Enhanced Carrier Mobility
International Business Machines Corporation
0 cites
US119232462024
Via CD Controllable Top via Structure
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US119160732024
Stacked Complementary Field Effect Transistors
International Business Machines Corporation
0 cites
US119160132024
Via Interconnects Including Super Vias
International Business Machines Corporation
0 cites
US119087322024
Alternating Spacers for Pitch Structure
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US118959342024
Phase Change Memory with Heater
International Business Machines Corporation
0 cites
US118827722024
Conductive-bridging Semiconductor Memory Device Formed by Selective Deposition
International Business Machines Corporation
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US118814312024
Anti-fuse with Laterally Extended Liner
International Business Machines Corporation
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US118761142024
Airgap Gate Spacer
International Business Machines Corporation
0 cites
US118483842023
Semiconductor Device with Airgap Spacer Formation from Backside of Wafer
International Business Machines Corporation
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US118482642023
Semiconductor Structure with Stacked Vias Having Dome-shaped Tips
International Business Machines Corporation
0 cites
US117988422023
Line Formation with Cut-first Tip Definition
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US117913962023
Field Effect Transistor with Multiple Gate Dielectrics and Dual Work-functions with Precisely Controlled Gate Lengths
International Business Machines Corporation
0 cites
US117841252023
Wrap Around Cross-couple Contact Structure with Enhanced Gate Contact Size
International Business Machines Corporation
0 cites
US117772752023
Augmented Semiconductor Lasers with Spontaneous Emissions Blockage
International Business Machines Corporation
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US117423502023
Metal Gate N/P Boundary Control by Active Gate Cut and Recess
International Business Machines Corporation
0 cites
US117355902023
Fin Stack Including Tensile-strained and Compressively Strained Fin Portions
International Business Machines Corporation
0 cites
US117354752023
Removal of Barrier and Liner Layers from a Bottom of a Via
International Business Machines Corporation
0 cites
US117284332023
Vertical Transistor with Self-aligned Gate
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US116886462023
Reduced Source/drain Coupling for CFET
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US116580622023
Air Gap Spacer Formation for Nano-scale Semiconductor Devices
TESSERA LLC
0 cites
US116371792023
Airgap Vertical Transistor Without Structural Collapse
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US116372382023
Resistive Random-access Memory Cell and Manufacturing Method Thereof
International Business Machines Corporation
0 cites
US116316172023
Scalable Device for FINFET Technology
International Business Machines Corporation
0 cites
US116262872023
Semiconductor Device with Improved Contact Resistance and via Connectivity
International Business Machines Corporation
0 cites
US115693612023
Nanosheet Transistors with Wrap Around Contact
International Business Machines Corporation
0 cites