Patents/Inventors

Changseung Lee

Suwon-siKR22 patents

19 Patents

US126107542026
Chalcogenide-based Material, and Switching Device and Memory Device That Include the Same
Samsung Electronics Co., Ltd.
0 cites
US125882182026
Chalcogenide Material, Switching Device Including the Chalcogenide Material, and Memory Device Including the Switching Device
Samsung Electronics Co., Ltd.
0 cites
US125637442026
Memory Device and Memory Apparatus Comprising the Same
Samsung Electronics Co., Ltd.
0 cites
US125435122026
Semiconductor Device and Semiconductor Apparatus Including the Same
Samsung Electronics Co., Ltd.
0 cites
US124712922025
Phase-change Memory Structure and Phase-change Memory Device Including the Same
Samsung Electronics Co., Ltd.
0 cites
US124262752025
Switching Device and Memory Device Including the Same
Samsung Electronics Co., Ltd.
0 cites
US124143092025
Memory Device Including Phase-change Material
Samsung Electronics Co., Ltd.
0 cites
US122681052025
Semiconductor Apparatus
Samsung Electronics Co., Ltd.
0 cites
US122549222025
Memory Device Including Switching Material and Phase Change Material
Samsung Electronics Co., Ltd.
0 cites
US121407342024
Optical Thin Film for Meta-surface and Meta-optical Device Including the Same
Samsung Electronics Co., Ltd.
0 cites
US121019422024
Semiconductor Device Including Chalcogen Compound and Semiconductor Apparatus Including the Same
Samsung Electronics Co., Ltd.
0 cites
US120637932024
Chalcogen Compound and Semiconductor Device Including the Same
Samsung Electronics Co., Ltd.
0 cites
US119472382024
Multilayer Thin-film Structure and Phase Shifting Device Using the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US118982442024
Plasma-enhanced Chemical Vapor Deposition Method of Forming Lithium-based Film by Using the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US118188992023
Semiconductor Device Including Layers with Different Chalcogen Compounds and Semiconductor Apparatus Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US118089182023
Meta-surface Optical Element and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US117441672023
Semiconductor Apparatus Including a Phase Change Material Layer Having a First and a Second Chalcogen Layer
Samsung Electronics Co., Ltd.
0 cites
US116932372023
Phase Shift Device Including Metal-dielectric Composite Structure
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
0 cites
US116770362023
Meta Optical Devices and Methods of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites