26 Patents
- US125934492026Vertical Nonvolatile Memory Device Including Gate Electrodes with Metal-doped Graphene
Samsung Electronics Co., Ltd.
0 cites - US125060742025Interconnect Structure to Reduce Contact Resistance, Electronic Device Including the Same, and Method of Manufacturing the Interconnect Structure
Samsung Electronics Co., Ltd.
0 cites - US124215982025Nanocrystalline Graphene and Method of Forming Nanocrystalline Graphene
Samsung Electronics Co., Ltd.
0 cites - US123896302025Vertical Channel Transistor Including a Graphene Insertion Layer Beweeen a Source/drain Electrode and a Channel Pattern
Samsung Electronics Co., Ltd.
0 cites - US123781202025Wiring Including Graphene Layer and Method of Manufacturing the Same
Seoul National University R&DB Foundation
0 cites - US123693592025Thin Film Structure and Electronic Device Including Two-dimensional Material
Samsung Electronics Co., Ltd.
0 cites - US122724022025Vertical Nonvolatile Memory Device Including Memory Cell String
Samsung Electronics Co., Ltd.
0 cites - US122625272025Vertical-channel Cell Array Transistor Structure and Dram Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US122119042025Black Phosphorus-two Dimensional Material Complex and Method of Manufacturing the Same
UNIST (ULSAN National Institute Of Science And Technology)
0 cites - US121805842024Method of Fabricating Hexagonal Boron Nitride
UNIST (Ulsan National Institute Of Science And Technology)
0 cites - US121835822024Film Deposition Method and Element Including Film Deposited by the Film Deposition Method
Samsung Electronics Co., Ltd.
0 cites - US121836792024Interconnect Structure and Electronic Apparatus Including the Same
UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
0 cites - US121398142024Boron Nitride Layer, Apparatus Including the Same, and Method of Fabricating the Boron Nitride Layer
UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
0 cites - US121319052024Graphene Structure and Method of Forming the Graphene Structure
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US120806492024Semiconductor Memory Device and Apparatus Including the Same
UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
0 cites - US120613122024Amorphous Boron Nitride Film and Anti-reflection Coating Structure Including the Same
Samsung Electronics Co., Ltd.
0 cites - US119759712024Methods of Forming Graphene and Graphene Manufacturing Apparatuses
Samsung Electronics Co., Ltd.
0 cites - US119787042024Wiring Structure and Electronic Device Employing the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US116826222023Interconnect Structure Having Nanocrystalline Graphene Cap Layer and Electronic Device Including the Interconnect Structure
Samsung Electronics Co., Ltd.
0 cites - US116241272023Boron Nitride Layer, Apparatus Including the Same, and Method of Fabricating the Boron Nitride Layer
UNIST (Ulsan National Institute Of Science And Technology)
0 cites - US116262822023Graphene Structure and Method of Forming Graphene Structure
Samsung Electronics Co., Ltd.
0 cites - US116265022023Interconnect Structure to Reduce Contact Resistance, Electronic Device Including the Same, and Method of Manufacturing the Interconnect Structure
Samsung Electronics Co., Ltd.
0 cites - 0 cites