22 Patents
- US125934492026Vertical Nonvolatile Memory Device Including Gate Electrodes with Metal-doped Graphene
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- 0 cites
- US123896302025Vertical Channel Transistor Including a Graphene Insertion Layer Beweeen a Source/drain Electrode and a Channel Pattern
Samsung Electronics Co., Ltd.
0 cites - US123693592025Thin Film Structure and Electronic Device Including Two-dimensional Material
Samsung Electronics Co., Ltd.
0 cites - US123538472025Semiconductor Device Capable of Performing In-memory Processing
Korea University Research And Business Foundation
0 cites - US123223592025Signal Processing Device and Image Display Apparatus Including the Same Capable of Increasing Clarity of OSD When Mixing with Image
LG ELECTRONICS Inc.
0 cites - US122625272025Vertical-channel Cell Array Transistor Structure and Dram Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - US121991652025Semiconductor Device and Electronic Apparatus Including the Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US121478882024Neural Computer Including Image Sensor Capable of Controlling Photocurrent
President And Fellows Of Harvard College
0 cites - 0 cites
- US120328292024Memory Device Performing In-memory Operation and Method Thereof
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US119090632024Battery Adhesive Structure and Electronic Device Comprising Same
Samsung Electronics Co., Ltd.
0 cites - US118878492024Method of Forming Transition Metal Dichalcogenidethin Film and Method of Manufacturing Electronic Device Including the Same
Research & Business Foundation, Sungkyunkwan University
0 cites - US118697682024Method of Forming Transition Metal Dichalcogenide Thin Film
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US116826222023Interconnect Structure Having Nanocrystalline Graphene Cap Layer and Electronic Device Including the Interconnect Structure
Samsung Electronics Co., Ltd.
0 cites - US116687822023Electronic Apparatus, Controlling Method of Electronic Apparatus and Computer Readable Medium
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US116262822023Graphene Structure and Method of Forming Graphene Structure
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US115453582023Method of Forming Transition Metal Dichalcogenide Thin Film
Research & Business Foundation Sungkyunkwan University
0 cites