18 Patents
- US125573722026Semiconductor Device Having Cut Gate Dielectric
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US124446082025Structure Having Gate Spacers with Projecting Portions Extending Into a Gate Dielectric
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123745422025Cut Metal Gate Process for Reducing Transistor Spacing
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US122437822025Local Gate Height Tuning by CMP and Dummy Gate Design
TAIWAN SEMICONDUCTOR MANUFACTURING C0., Ltd.
0 cites - US122182392025Structure and Method for Providing Line End Extensions for Fin-type Active Regions
Mosaid Technologies Incorporated
0 cites - 0 cites
- US121563942024SRAM Structure and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120573492024Profile Control of a Gap Fill Structure
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120209892024Structure for Fringing Capacitance Control
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US120092662024Structure for Fringing Capacitance Control
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US119488422024Etch Stop Layer Between Substrate and Isolation Structure
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119012372024Semiconductor Device Having Cut Gate Dielectric
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US118173542023Local Gate Height Tuning by Cmp and Dummy Gate Design
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd
0 cites - US117215442023Cut Metal Gate Process for Reducing Transistor Spacing
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117217612023Structure and Method for Providing Line End Extensions for Fin-type Active Regions
Mosaid Technologies Incorporated
0 cites - US116997582023Isolation Structure Having Different Distances to Adjacent Finfet Devices
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- 0 cites