Patents/Inventors

Chang-yin Chen

TaipeiTW12 patents

13 Patents

US124084112025
Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US122610512025
Semiconductor Device with Fin Isolation
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US122374172025
Finfet Device and Method of Forming and Monitoring Quality of the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US122182162025
Method for Manufacturing Semiconductor Devices Having Gate Spacers with Bottom Portions Recessed in a Fin
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US122117502025
Mechanisms for Forming Finfet Device
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US121258912024
Semiconductor Device Having Gate Spacers Extending Below a Fin Top Surface
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US120028712024
Semiconductor Device Structure with Work Function Layer and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US119731442024
Method of Manufacturing a Semiconductor and a Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US119294192024
Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US118548252023
Gate Structure of Semiconductor Device and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US118429322023
Notched Gate Structure Fabrication
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd
0 cites
US117840552023
Method of Forming Semiconductor Device with Fin Isolation
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US117217622023
Fin Field Effect Transistor (finfet) Device and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites