Chang Hwan Choi

4 Patents

• US122119402025

  Thin Film Transistor and Vertical Non-volatile Memory Device Including Transition Metal-induced Polycrystalline Metal Oxide Channel Layer

  Samsung Electronics Co., Ltd.

  0 cites
• US119425532024

  Method for Fabricating a Semiconductor Device

  Samsung Electronics Co., Ltd.

  0 cites
• US118827052024

  Three-dimensional Semiconductor Memory Device, Operating Method of the Same and Electronic System Including the Same

  Samsung Electronics Co., Ltd.

  0 cites
• US116160812023

  Three-dimensional Semiconductor Memory Device Including Ferroelectric Thin Film and Manufacturing Method of the Same

  SAMSUNG ELECTRONICS CO., Ltd.

  0 cites