9 Patents
- US126159692026Phase-change Memory Device with Tapered Thermal Transfer Layer
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124844592025Planarization-less Phase Change Material Switch
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US123877862025Bit Line and Word Line Connection for Memory Array
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123695032025Encapsulated Phase Change Material Switch and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US123549512025Layout for Reducing Loading at Line Sockets And/or for Increasing Overlay Tolerance While Cutting Lines
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123027672025Buffer Layer in Memory Cell to Prevent Metal Redeposition
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123027642025In-situ Formation of a Spacer Layer for Protecting Sidewalls of a Phase Change Memory Element and Methods for Forming the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US120482582024Phase Change Memory Device and Method for Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117155192023Bit Line and Word Line Connection for Memory Array
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites