5 Patents
- US119964472024Field Effect Transistors with Gate Electrode Self-aligned to Semiconductor Fin
Intel Corporation
0 cites - US117642752023Indium-containing Fin of a Transistor Device with an Indium-rich Core
Intel Corporation
0 cites - US116706822023FINFET Transistor Having a Doped Sub Fin Structure to Reduce Channel to Substrate Leakage
Tahoe Research, Ltd.
0 cites - US116317372023Ingaas Epi Structure and Wet Etch Process for Enabling Iii-v GAA in Art Trench
Intel Corporation
0 cites - 0 cites