Patents/Inventors

Chan Kyung Kim

Hwaseong-siKR2 patents

3 Patents

US120147632024
Magnetic Junction Memory Device and Writing Method Thereof
Samsung Electronics Co., Ltd.
0 cites
US118897032024
Magnetic Junction Memory Device and Reading Method Thereof
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US117986212023
Resistive Memory Device and Method for Reading Data in the Resistive Memory Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites