22 Patents
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- US122836212025Semiconductor Device Having a Transistor with Trenches and Mesas
Infineon Technologies Austria AG
0 cites - US122666942025Silicon Carbide Device with a Stripe-shaped Trench Gate Structure
Infineon Technologies AG
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- US119293972024Semiconductor Device Including Trench Structure and Manufacturing Method
Infineon Technologies AG
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- US118880322024Method of Producing a Silicon Carbide Device with a Trench Gate
Infineon Technologies AG
0 cites - US117640632023Silicon Carbide Device with Compensation Region and Method of Manufacturing
Infineon Technologies AG
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- US116264772023Silicon Carbide Field-effect Transistor Including Shielding Areas
Infineon Technologies AG
0 cites - US116109762023Semiconductor Device Including a Transistor with One or More Barrier Regions
Infineon Technologies Austria AG
0 cites - US116109862023Power Semiconductor Switch Having a Cross-trench Structure
Infineon Technologies Dresden GmbH & Co. KG
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- US115814292023Power Semiconductor Switch Having a Cross-trench Structure
Infineon Technologies Dresden GmbH & Co. KG
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- US115521722023Silicon Carbide Device with Compensation Layer and Method of Manufacturing
Infineon Technologies AG
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