4 Patents
- US124084912025Method for Manufacturing a Native Emission Matrix Having Doped and Porosified In(x)gan
COMMISSARIAT à L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES
0 cites - US123426612025Method for Manufacturing a Substrate Comprising a Relaxed Ingan Layer and Substrate Thus Obtained for the Resumption of Growth of a LED Structure
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
0 cites - US117497792023Process for Manufacturing a Relaxed Gan/ingan Structure
COMMISSARIAT à L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES
0 cites - US117356932023Method for Manufacturing a Substrate Comprising a Relaxed Ingan Layer
COMMISSARIAT à L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES
0 cites