26 Patents
- US125752242026P-type Doping in Gan Leds for High Speed Operation at Low Current Densities
Avicenatech, Corp.
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- US122118282025Light Emitting Diode Device Containing a Positive Photoresist Insulating Spacer and a Conductive Sidewall Contact and Method of Making the Same
SAMSUNG ELECTRONICS CO., Ltd.
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- US121321462024P-type Doping in Gan Leds for High Speed Operation at Low Current Densities
Avicenatech, Corp.
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- US121011282024LED Chip-to-chip Vertically Launched Optical Communications with Optical Fiber
Avicenatech, Corp.
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- US118109952023P-type Doping in Gan Leds for High Speed Operation at Low Current Densities
Avicenatech Corp.
0 cites - 0 cites
- US117648782023LED Chip-to-chip Vertically Launched Optical Communications with Optical Fiber
AVICENATECH Corp.
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