Byung Yoon Kim

10 Patents

• US122740512025

  Metal Gate Memory Device and Method

  Micron Technology, Inc.

  0 cites
• US122242012025

  Single Crystalline Silicon Stack Formation and Bonding to a Cmos Wafer

  Micron Technology, Inc.

  0 cites
• US121990942025

  Apparatuses Including Finfets Having Different Gate Oxide Configurations, and Related Computing Systems

  Micron Technology, Inc.

  0 cites
• US120637972024

  Buried Connection Line for Peripheral Area of a Memory Device

  Micron Technology, Inc.

  0 cites
• US120528582024

  Vertical Contacts for Semiconductor Devices

  Micron Technology, Inc.

  0 cites
• US119031832024

  Conductive Line Contact Regions Having Multiple Multi-direction Conductive Lines and Staircase Conductive Line Contact Structures for Semiconductor Devices

  Micron Technology, Inc.

  0 cites
• US118698032024

  Single Crystalline Silicon Stack Formation and Bonding to a CMOS Wafer

  Micron Technology, Inc.

  0 cites
• US117912602023

  Contacts for Twisted Conductive Lines Within Memory Arrays

  Micron Technology, Inc.

  0 cites
• US116964322023

  Multi-direction Conductive Line and Staircase Contact for Semiconductor Devices

  Micron Technology, Inc.

  0 cites
• US116316812023

  Vertical Contacts for Semiconductor Devices

  Micron Technology, Inc.

  0 cites