Byung Kyu Jang

10 Patents

• US123200332025

  Silicon Carbide Wafer and Method of Preparing the Same

  SENIC Inc.

  0 cites
• US119396982024

  Wafer Manufacturing Method, Epitaxial Wafer Manufacturing Method, and Wafer and Epitaxial Wafer Manufactured Thereby

  SENIC Inc.

  0 cites
• US118593052024

  Apparatus for Growing a Sic Single Crystal Ingot Comprising a Filter Unit Having a Porous Body Surrounding an Opening Unit That Is Located Under a Seed Crystal

  SENIC Inc.

  0 cites
• US118566782023

  Method of Measuring a Graphite Article, Apparatus for a Measurement, and Ingot Growing System

  SENIC Inc.

  0 cites
• US118460382023

  Method of Growing Semi-insulating Silicon Carbide Single Crystal Using Dopant Coated with a Carbon-based Material

  SENIC Inc.

  0 cites
• US117955722023

  Method of Manufacturing a Silicon Carbide Ingot Comprising Moving a Heater Surrounding a Reactor to Induce Silicon Carbide Raw Materials to Sublimate and Growing the Silicon Carbide Ingot on a Seed Crystal

  SENIC Inc.

  0 cites
• US117086442023

  Method for Preparing Sic Ingot, Method for Preparing Sic Wafer and the Sic Wafer Prepared Therefrom

  SENIC Inc.

  0 cites
• US116462092023

  Method of Cleaning Wafer and Wafer with Reduced Impurities

  SENIC Inc.

  0 cites
• US115917112023

  Method and System for Producing Silicon Carbide Ingot

  SENIC Inc.

  0 cites
• US115663442023

  Silicon Carbide Ingot, Wafer, Method for Producing a Silicon Carbide Ingot, and Method for Manufacturing a Wafer

  SENIC Inc.

  0 cites