43 Patents
- US126157672026Multi-stack Nanosheet Structure Including Semiconductor Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US125884892026Integrated Circuit Devices Including Stacked Elements and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites - US1255037520263d-stacked Semiconductor Device Including Gate Structure with RMG Inner Spacer Protecting Lower Work-function Metal Layer
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US125433472026Different Diffusion Break Structures for Three-dimensional Stacked Semiconductor Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US124905022025Bipolar Junction Transistors and P-N Junction Diodes Including Stacked Nano-semiconductor Layers
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US124648182025Three-dimensional Semiconductor Device Having Vertical Misalignment
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US123763522025Integrated Circuit Devices Including a Vertical Field-effect Transistor and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites - US123640182025Limited Lateral Growth of S/D Epi by Outer Dielectric Layer in 3-dimensional Stacked Device
Samsung Electronics Co., Ltd.
0 cites - US123566652025Stacked Transistors Having an Isolation Region Therebetween and a Common Gate Electrode, and Related Fabrication Methods
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US123175882025Step-stacked Nanowire CMOS Structure for Low Power Logic Device and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US123175822025Integrated Circuit Devices Including a Metal Resistor and Methods of Forming the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
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- US122496032025Resistor Structures of Integrated Circuit Devices Including Stacked Transistors and Methods of Forming the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US122439462025Integrated Circuit Devices Including a Common Gate Electrode and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites - US122305712025Integrated Circuit Devices Including a Power Rail and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites - US122243142025Size-controllable Multi-stack Semiconductor Device and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US122117602025Integrated Circuit Devices Including a Parameter Measuring Structure and Methods of Forming the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US121837862024Multi-stack Semiconductor Device with Zebra Nanosheet Structure
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US121441632024Selective Double Diffusion Break Structures for Multi-stack Semiconductor Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US121257882024Through Silicon Buried Power Rail Implemented Backside Power Distribution Network Semiconductor Architecture and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US120948692024Diode Structures of Stacked Devices and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites - US120878152024Crossing Multi-stack Nanosheet Structure and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US120574482024Stacked Semiconductor Device Having Mirror-symmetric Pattern
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US120516972024Integrated Circuit Devices Including Stacked Gate Structures with Different Dimensions
Samsung Electronics Co., Ltd.
0 cites - US120403272024Three-dimensional Semiconductor Device Having Vertical Misalignment
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US119359222024Semiconductor Device Having Stepped Multi-stack Transistor Structure
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US118814552024Through Silicon Buried Power Rail Implemented Backside Power Distribution Network Semiconductor Architecture and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US117642072023Diode Structures of Stacked Devices and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites - US117355852023Stacked Semiconductor Device Having Mirror-symmetric Pattern
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US116887422023Different Diffusion Break Structures for Three-dimensional Stacked Semiconductor Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US116706772023Crossing Multi-stack Nanosheet Structure and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US116057082023Integrated Circuit Devices Including a Vertical Field-effect Transistor and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites - US115692322023Semiconductor Device Including Self-aligned Gate Structure and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites