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Byeong Chan Lee
San Jose, CA
US
2 patents
3 Patents
US12327761
2025
Void-free Contact Trench Fill in Gate-all-around FET Architecture
APPLIED MATERIALS, Inc.
0 cites
US12284803
2025
System and Methods for Dram Contact Formation
APPLIED MATERIALS, Inc.
0 cites
US11923441
2024
Gate All Around I/O Engineering
Applied Materials, Inc.
0 cites