Patents/Inventors

Bruno Ghyselen

SeyssinetFR24 patents

24 Patents

US124827012025
Method for Producing a Stacked Structure
Soitec
0 cites
US124482842025
Membrane Transfer Method
Soitec
0 cites
US124216222025
Method for Producing a Monocrystalline Layer of Lithium Niobate by Transferring a Seed Layer of Yttria-stabilized Zirconia to a Silicon Carrier Substrate and Epitaxially Growing the Monocrystalline Layer of Lithium Niobate and Substrate for Epitaxial Growth of a Monocrystalline Layer of Lithium Niobate
Soitec
0 cites
US124265072025
Method for Producing a Crystalline Layer of PZT Material by Transferring a Seed Layer of SRTIO3 to a Silicon Carrier Substrate and Epitaxially Growing the Crystalline Layer of PZT, and Substrate for Epitaxial Growth of a Crystalline Layer of PZT
Soitec
0 cites
US123568582025
Method for the Production of a Single-crystal Film, in Particular Piezoelectric
Soitec
0 cites
US122341442025
Method for Sealing Cavities Using Membranes
SOITEC
0 cites
US121781332024
Methods for Designing and Producing a Device Comprising an Array of Micro-machined Elements, and Device Produced by Said Methods
Soitec
0 cites
US120947592024
Method for Transferring Blocks from a Donor Substrate Onto a Receiver Substrate by Implanting Ions in the Donor Substrate Through a Mask, Bonding the Donor Substrate to the Receiver Substrate, and Detaching the Donor Substrate Along an Embrittlement Plane
Soitec
0 cites
US120876152024
Method for Manufacturing a Film on a Support Having a Non-flat Surface
Soitec
0 cites
US120717062024
Process for Producing a Monoocrystalline Layer of Aln Material by Transferring a Sic-6h Seed to a Si Carrier Substrate and Epitaxially Growing the Monocrystalline Layer of Aln Material and Substrate for the Epitaxial Growth of a Monocrystalline Layer of Aln Material
SOITEC
0 cites
US120529212024
Method for Manufacturing a Film on a Flexible Sheet
SOITEC
0 cites
US119763802024
Method for Manufacturing a Monocrystalline Layer of Gaas Material and Substrate for Epitaxial Growth of a Monocrystalline Layer of Gaas Material
SOITEC
0 cites
US119392142024
Method for Manufacturing a Device Comprising a Membrane Extending Over a Cavity
Soitec
0 cites
US119404072024
Micro-sensor for Detecting Chemical Species and Associated Manufacturing Method
Soitec
0 cites
US119357432024
Method for Manufacturing a Monocrystalline Layer of Diamond or Iridium Material and Substrate for Epitaxially Growing a Monocrystalline Layer of Diamond or Iridium Material
SOITEC
0 cites
US119131342024
Process for Manufacturing a Two-dimensional Film of Hexagonal Crystalline Structure Using Epitaxial Growth on a Transferred Thin Metal Film
SOITEC
0 cites
US118775142024
Method for Producing a Crystalline Layer of PZT Material by Transferring a Seed Layer of Srtio 3 to a Silicon Carrier Substrate and Epitaxially Growing the Crystalline Layer of PZT, and Substrate for Epitaxial Growth of a Crystalline Layer of PZT
Soitec
0 cites
US118280002023
Method for Producing a Monocrystalline Layer of Lithium Niobate by Transferring a Seed Layer of Yttria-stabilized Zirconia to a Silicon Carrier Substrate and Epitaxially Growing the Monocrystalline Layer of Lithium Niobate and Substrate for Epitaxial Growth of a Monocrystalline Layer of Lithium Niobate
Soitec
0 cites
US117768432023
Method for Transferring Blocks from a Donor Substrate Onto a Receiver Substrate by Implanting Ions in the Donor Substrate Through a Mask, Bonding the Donor Substrate to the Receiver Substrate, and Detaching the Donor Substrate Along an Embrittlement Plane
Soitec
0 cites
US117441532023
Method for Producing a Layer by Thinning and Ion Penetration
Soitec
0 cites
US117069892023
Methods for Designing and Producing a Device Comprising an Array of Micromachined Elements, and Device Produced by Said Methods
Soitec
0 cites
US116007662023
Method for Manufacturing a Monocrystalline Piezoelectric Layer
Soitec
0 cites
US115577152023
Method for Manufacturing a Film on a Flexible Sheet
Soitec
0 cites
US115491952023
Method for Manufacturing a Monocrystalline Layer of Gaas Material and Substrate for Epitaxtial Growth of a Monocrystalline Layer of Gaas Material
Soitec
0 cites