4 Patents
- US125882362026Two-rotation Gate-edge Diode Leakage Reduction for MOS Transistors
TEXAS INSTRUMENTS INCORPORATED
0 cites - US121549012024Semiconductor Device with Diffusion Suppression and LDD Implants and an Embedded Non-ldd Semiconductor Device
TEXAS INSTRUMENTS INCORPORATED
0 cites - US120094232024Two-rotation Gate-edge Diode Leakage Reduction for MOS Transistors
Texas Instruments Incorporated
0 cites - US116160582023Semiconductor Device with Diffusion Suppression and LDD Implants and an Embedded Non-ldd Semiconductor Device
Texas Instruments Incorporated
0 cites