Brian D. Schultz

3 Patents

• US119429192024

  Strain Compensated Rare Earth Group Iii-nitride Heterostructures

  Raytheon Company

  0 cites
• US115946272023

  Semiconductor Structure Having Both Enhancement Mode Group III-N High Electron Mobility Transistors and Depletion Mode Group III-N High Electron Mobility Transistors

  Raytheon Company

  0 cites
• US115455662023

  Gallium Nitride High Electron Mobility Transistors (hemts) Having Reduced Current Collapse and Power Added Efficiency Enhancement

  Raytheon Company

  0 cites