3 Patents
- US121548332024Semiconductor Doping Characterization Method Using Photoneutralization Time Constant of Corona Surface Charge
SEMILAB Semiconductor Physics Laboratory Co., Ltd.
0 cites - US120274302024Semiconductor Doping Characterization Method Using Photoneutralization Time Constant of Corona Surface Charge
SEMILAB Semiconductor Physics Laboratory Co., Ltd.
0 cites - US115612542023Topside Contact Device and Method for Characterization of High Electron Mobility Transistor (HEMT) Heterostructure on Insulating and Semi-insulating Substrates
SEMILAB Semiconductor Physics Laboratory Co., Ltd.
0 cites