51 Patents
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- US126158172026Stacked FET with Low Parasitic-capacitance Gate
International Business Machines Corporation
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- US125686692026Placeholder Profile Formation for Backside Contact
International Business Machines Corporation
0 cites - US125686452026Vertical Field Effect Transistor with Self-aligned Backside Trench Epitaxy
International Business Machines Corporation
0 cites - US125637152026Stacked Random-access-memory with Complementary Adjacent Cells
International Business Machines Corporation
0 cites - US125576272026Stacked FET with Bottom Epi Size Control and Wraparound Backside Contact
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US125573532026Method and Structure for a Logic Device and Another Device
International Business Machines Corporation
0 cites - US125573282026Vertical-transport Field-effect Transistor with Backside Source/drain Connections
International Business Machines Corporation
0 cites - US125576262026Self-aligned Backside Contact with Deep Trench Last Flow
International Business Machines Corporation
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- US125507852026Separated Input/output (I/O) and Shared Power Terminals for a Carrier Wafer with a Built-in Device for Bonding with Another Device Wafer
International Business Machines Corporation
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- US124905072025Different Dimensions Across Active Region for Stronger via to Backside Power Rail
INTERNATIONAL BUSINESS MACHINES CORPORATION
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- US124842482025Source/drain Contact at Tight Cell Boundary
International Business Machines Corporation
0 cites - US124842652025Subtractive Source Drain Contact for Stacked Devices
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US124778192025Stacked FET with Extremely Small Cell Height
International Business Machines Corporation
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- US124631282025Interconnect Structures with Vias Having Vertical and Horizontal Sections
International Business Machines Corporation
0 cites - US124577932025Vertical Transport Field Effect Transistor (VTFET) with Backside Wraparound Contact
International Business Machines Corporation
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- US124463202025Bottom Contact with Self-aligned Spacer for Stacked Semiconductor Devices
International Business Machines Corporation
0 cites - US124396082025MRAM Integration with Self-aligned Direct Back Side Contact
International Business Machines Corporation
0 cites - US124396602025Vertical Transistor with Reduced Cell Height
International Business Machines Corporation
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- US124245912025Method and Structure of Forming Independent Contact for Staggered CFET
International Business Machines Corporation
0 cites - US124179792025Pass-through Wiring in Notched Interconnect
International Business Machines Corporation
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- US124190792025Field Effect Transistor with Backside Source/drain
International Business Machines Corporation
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- US124009602025Vertical-transport Field-effect Transistor with Backside Gate Contact
International Business Machines Corporation
0 cites - US123895822025High Density Stacked Vertical Transistor Static Random Access Memory Structure
International Business Machines Corporation
0 cites - US123640042025Dummy Fin Contact in Vertically Stacked Transistors
International Business Machines Corporation
0 cites - US123567092025Vertical Field-effect Transistor with Isolation Pillars
International Business Machines Corporation
0 cites - US123494582025Staggered Stacked Circuits with Increased Effective Width
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US123425782025Stacked Layer Memory Suitable for SRAM and Having a Long Cell
International Business Machines Corporation
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- US122680312025Backside Power Rails and Power Distribution Network for Density Scaling
International Business Machines Corporation
0 cites - US122680262025High Aspect Ratio Contact Structure with Multiple Metal Stacks
International Business Machines Corporation
0 cites - US122680162025Buried Power Rail Formation for Vertical Field Effect Transistors
International Business Machines Corporation
0 cites - USRE0501812024Isolation Region Fabrication for Replacement Gate Processing
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US120402502024Heat Pipe for Vertically Stacked Field Effect Transistors
International Business Machines Corporation
0 cites - US120340052024Self-aligned Metal Gate with Poly Silicide for Vertical Transport Field-effect Transistors
International Business Machines Corporation
0 cites - US119617592024Interconnects Having Spacers for Improved Top via Critical Dimension and Overlay Tolerance
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US116887752023Method of Forming First and Second Contacts Self-aligned Top Source/drain Region of a Vertical Field-effect Transistor
International Business Machines Corporation
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