3 Patents
- US121837322024Semiconductor Devices Including an Isolation Insulating Pattern on a Boundary Region of a Substrate and Between First Active Patterns and Second Active Patterns
Samsung Electronics Co., Ltd.
0 cites - US118698112024Semiconductor Device and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US117054512023Semiconductor Devices Including an Isolation Insulating Pattern with a First Bottom Surface, a Second Bottom Surface, and a Third Bottom Surface Therebetween, Where the Third Bottom Surface Has a Different Height Than the First and Second Bottom Surfaces
Samsung Electronics Co., Ltd.
0 cites