Patents/Inventors

Bong Woong Mun

SingaporeSG13 patents

13 Patents

US125507252026
Structure for Galvanic Isolation Using Dielectric-filled Trench in Substrate Below Electrode
Globalfoundries Singapore Pte. Ltd.
0 cites
US125385512026
Semiconductor Structures for Galvanic Isolation
GLOBALFOUNDRIES Singapore Pte. Ltd.
0 cites
US124083732025
Device with Three Dimensional Channel
GLOBALFOUNDRIES Singapore Pte. Ltd.
0 cites
US123362202025
Extended-drain Metal-oxide-semiconductor Devices with a Gap Between the Drain and Body Wells
Globalfoundries Singapore Pte. Ltd.
0 cites
US122899132025
Device with Metal Field Plate Extension
GLOBALFOUNDRIES Singapore Pte. Ltd
0 cites
US121913512025
Laterally-diffused Metal-oxide-semiconductor Devices with an Air Gap
Globalfoundries Singapore Pte. Ltd.
0 cites
US119964412024
Semiconductor Device for High Voltage Applications
GLOBALFOUNDRIES Singapore Pte. Ltd.
0 cites
US119555142024
Field-effect Transistors with a Gate Structure in a Dual-depth Trench Isolation Structure
Globalfoundries U.S. Inc.
0 cites
US118626932024
Semiconductor Devices Including a Drain Captive Structure Having an Air Gap and Methods of Forming the Same
GLOBALFOUNDRIES Singapore Pte. Ltd.
0 cites
US117913792023
Galvanic Isolation Using Isolation Break Between Redistribution Layer Electrodes
GLOBALFOUNDRIES SINGAPORE PTE Ltd
0 cites
US117913922023
Extended-drain Metal-oxide-semiconductor Devices with a Notched Gate Electrode
Globalfoundries Singapore Pte. Ltd.
0 cites
US117642732023
Semiconductor Structures for Galvanic Isolation
GLOBALFOUNDRIES SINGAPORE PTE. Ltd.
0 cites
US116582402023
Semiconductor Transistors on Multi-layered Substrates
GLOBALFOUNDRIES SINGAPORE PTE. Ltd.
0 cites