6 Patents
- 0 cites
- US124263322025Introducing Fluorine to Gate After Work Function Metal Deposition
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121913662025Semiconductor Structure with Enlarged Gate Electrode Structure and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120150682024Gate Structure and Method of Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
0 cites - US119964532024Introducing Fluorine to Gate After Work Function Metal Deposition
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118483672023Method for Manufacturing Semiconductor Device
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites