30 Patents
- US126204502026Aborted Operation Detection for Nonvolatile Memory with Non-uniform Erase
Sandisk Technologies, Inc.
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- US124007192025Non-volatile Memory with Overdrive Voltage Zoning to Compensate for Reduced Margins
Sandisk Technologies, Inc.
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- US123679372025Binary Read-based Fast Algorithm for Optimal Read Level Acquisition
SANDISK TECHNOLOGIES, Inc.
0 cites - US123546832025Non-volatile Memory with Erase Depth Detection and Adaptive Adjustment to Programming
Sandisk Technologies, Inc.
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- US121987692025Smart Early Detection of Wordline-memory Hole Defects with Wordline-dependent Dual Sensing During Erase Verify
Sandisk Technologies LLC
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- US121255372024Variable Programming Voltage Step Size Control During Programming of a Memory Device
Sandisk Technologies LLC
0 cites - US120727052024Intelligent Decision-making Method and System for Unmanned Surface Vehicle
CENTRAL CHINA OPTOELECTRONIC TECHNOLOGY RESEARCH INSTITUTE
0 cites - US120571692024Techniques for Reading Memory Cells in a Memory Device During a Multi-pass Programming Operation
Sandisk Technologies LLC
0 cites - US120462972024Method to Optimize First Read Versus Second Read Margin by Switching Boost Timing
Sandisk Technologies LLC
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- US117674032023Method for Controlling Thermoplasticity and Toughness of Redox-modified Plant Fiber and Use Thereof
SOUTH CHINA UNIVERSITY OF TECHNOLOGY
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- US117352732023Data Storage Systems and Methods for Improved Recovery After a Write Abort Event
Western Digital Technologies, Inc.
0 cites - US117052062023Modifying Program and Erase Parameters for Single-bit Memory Cells to Improve Single-bit/multi-bit Hybrid Ratio
Sandisk Technologies LLC
0 cites - US116903332023System and Method for Optimal Allocation of Agricultural Water Based on Water Consumption Control
China Institute Of Water Resources And Hydropower Research
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- US116261602023Dynamic Sense Node Voltage to Compensate for Variances When Sensing Threshold Voltages of Memory Cells
Sandisk Technologies LLC
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