76 Patents
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- US126158132026Gate-all-around Integrated Circuit Structures Having Vertically Discrete Source or Drain Structures
Intel Corporation
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- US125074642025Gate Aligned Fin Cut for Advanced Integrated Circuit Structure Fabrication
Intel Corporation
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Intel Corporation
0 cites - 0 cites
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Intel Corporation
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- US124263162025Method of Fabricating Integrated Circuits with Fin Trim Plug Structures Having an Oxidation Catalyst Layer Surrounded by a Recessed Dielectric Material
Intel Corporation
0 cites - US124190912025Source Electrode and Drain Electrode Protection for Nanowire Transistors
Intel Corporation
0 cites - US124126112025Time Decoupled Write Operations for Non-linear Polar Material Based Memory
Kepler Computing Inc.
0 cites - US124023492025Gate-all-around Integrated Circuit Structures Having Devices with Channel-to-substrate Electrical Contact
Intel Corporation
0 cites - US123827062025Self-aligned Gate Endcap (SAGE) Architectures with Gate-all-around Devices
Intel Corporation
0 cites - US123693932025Gate-all-around Integrated Circuit Structures Having Depopulated Channel Structures Using Bottom-up Approach
Intel Corporation
0 cites - US123693922025Fabrication of Gate-all-around Integrated Circuit Structures Having Pre-spacer Deposition Cut Gates
Intel Corporation
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- US123493942025Dielectric Isolation Layer Between a Nanowire Transistor and a Substrate
Intel Corporation
0 cites - US123426122025Neighboring Gate-all-around Integrated Circuit Structures Having Disjoined Epitaxial Source or Drain Regions
Intel Corporation
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Intel Corporation
0 cites - US123289202025Nanoribbon Sub-fin Isolation by Backside Si Substrate Removal Etch Selective to Source and Drain Epitaxy
Intel Corporation
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- US123026322025Non-planar Integrated Circuit Structures Having Mitigated Source or Drain Etch from Replacement Gate Process
Intel Corporation
0 cites - US122940062025Gate-all-around Integrated Circuit Structures Having Insulator Substrate
Intel Corporation
0 cites - US122888082025High Aspect Ratio Source or Drain Structures with Abrupt Dopant Profile
Intel Corporation
0 cites - US122887892025Gate-all-around Integrated Circuit Structures Having Devices with Source/drain-to-substrate Electrical Contact
Intel Corporation
0 cites - US122727372025Gate-all-around Integrated Circuit Structures Having Adjacent Structures for Sub-fin Electrical Contact
Intel Corporation
0 cites - US122307212025Gate-all-around Integrated Circuit Structures Having Asymmetric Source and Drain Contact Structures
Intel Corporation
0 cites - US122307172025Integrated Circuit Structures Having Partitioned Source or Drain Contact Structures
Intel Corporation
0 cites - US122243502025Self-aligned Gate Endcap (SAGE) Architectures with Gate-all-around Devices
Intel Corporation
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- US122060272025Gate-all-around Integrated Circuit Structures Having Nanowires with Tight Vertical Spacing
Intel Corporation
0 cites - US121991432025Gate-all-around Integrated Circuit Structures Having Removed Substrate
Intel Corporation
0 cites - US121764292024Wrap-around Contact Structures for Semiconductor Nanowires and Nanoribbons
Intel Corporation
0 cites - US121660312024Substrate-less Electrostatic Discharge (ESD) Integrated Circuit Structures
Intel Corporation
0 cites - US121599012024Gate-all-around Integrated Circuit Structures Having Source or Drain Structures with Epitaxial Nubs
Intel Corporation
0 cites - US120683142024Fabrication of Gate-all-around Integrated Circuit Structures Having Adjacent Island Structures
Intel Corporation
0 cites - US120574912024Self-aligned Gate Endcap (SAGE) Architectures with Gate-all-around Devices Above Insulator Substrates
Intel Corporation
0 cites - US120149592024Integrated Nanowire and Nanoribbon Patterning in Transistor Manufacture
Intel Corporation
0 cites - US120028102024Gate-all-around Integrated Circuit Structures Having Depopulated Channel Structures Using Bottom-up Approach
Intel Corporation
0 cites - US119904722024Fabrication of Gate-all-around Integrated Circuit Structures Having Pre-spacer Deposition Cut Gates
Intel Corporation
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- US119088562024Gate-all-around Integrated Circuit Structures Having Devices with Source/drain-to-substrate Electrical Contact
Intel Corporation
0 cites - US119014582024Dielectric Isolation Layer Between a Nanowire Transistor and a Substrate
Intel Corporation
0 cites - US118943682024Gate-all-around Integrated Circuit Structures Fabricated Using Alternate Etch Selective Material
Intel Corporation
0 cites - 0 cites
- US118698912024Non-planar Integrated Circuit Structures Having Mitigated Source or Drain Etch from Replacement Gate Process
Intel Corporation
0 cites - 0 cites
- US118626352024Neighboring Gate-all-around Integrated Circuit Structures Having Disjoined Epitaxial Source or Drain Regions
Intel Corporation
0 cites - US118552232023Self-aligned Gate Endcap (SAGE) Architectures with Gate-all-around Devices
Intel Corporation
0 cites - US118376412023Gate-all-around Integrated Circuit Structures Having Adjacent Deep via Substrate Contacts for Sub-fin Electrical Contact
Intel Corporation
0 cites - US118241162023Gate-all-around Integrated Circuit Structures Having Devices with Channel-to-substrate Electrical Contact
Intel Corporation
0 cites - US118241072023Wrap-around Contact Structures for Semiconductor Nanowires and Nanoribbons
Intel Corporation
0 cites - US118045232023High Aspect Ratio Source or Drain Structures with Abrupt Dopant Profile
Intel Corporation
0 cites - US117990372023Gate-all-around Integrated Circuit Structures Having Asymmetric Source and Drain Contact Structures
Intel Corporation
0 cites - US117990092023Gate-all-around Integrated Circuit Structures Having Adjacent Structures for Sub-fin Electrical Contact
Intel Corporation
0 cites - US117698362023Gate-all-around Integrated Circuit Structures Having Nanowires with Tight Vertical Spacing
Intel Corporation
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- US117497332023FIN Shaping Using Templates and Integrated Circuit Structures Resulting Therefrom
Intel Corporation
0 cites - 0 cites
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- US117157752023Self-aligned Gate Endcap (SAGE) Architectures with Gate-all-around Devices Having Epitaxial Source or Drain Structures
Intel Corporation
0 cites - 0 cites
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- US116213542023Integrated Circuit Structures Having Partitioned Source or Drain Contact Structures
Intel Corporation
0 cites - US115946372023Gate-all-around Integrated Circuit Structures Having Fin Stack Isolation
Intel Corporation
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