23 Patents
- US125882712026Multi-layer Electrode to Improve Performance of Ferroelectric Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US125687772026Top Electrode via with Low Contact Resistance
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124084482025Deep Trench Isolation Structure and Methods for Fabrication Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123641712025Resistive Memory Cell with Switching Layer Comprising One or More Dopants
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123566312025Feram with Laminated Ferroelectric Film and Method Forming Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123493662025Interface Film to Mitigate Size Effect of Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US122952672025Semiconductor Device and Method of Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - 0 cites
- US122390352025Resistive Memory Cell Having a Low Forming Voltage
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US122324342025Multi-doped Data Storage Structure Configured to Improve Resistive Memory Cell Performance
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121609952024Wakeup Free Approach to Improve the Ferroelectricity of Feram Using a Stressor Layer
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121375722024Ferroelectric Memory Device and Method of Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121274832024Doped Sidewall Spacer/etch Stop Layer for Memory
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120756262024Memory Window of MFM MOSFET for Small Cell Size
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120698672024Ferroelectric Random Access Memory Device with Seed Layer
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120355372024Interface Film to Mitigate Size Effect of Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119676112024Multilayer Structure, Capacitor Structure and Electronic Device
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US119161272024Multi-layer Electrode to Improve Performance of Ferroelectric Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US118959332024Resistive Memory Cell with Switching Layer Comprising One or More Dopants
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US118442262023Feram with Laminated Ferroelectric Film and Method Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117372802023Wakeup Free Approach to Improve the Ferroelectricity of Feram Using a Stressor Layer
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117232122023Memory Window of MFM MOSFET for Small Cell Size
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116659092023Feram with Laminated Ferroelectric Film and Method Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites