10 Patents
- US125922672026Magnetoresistive Memory Device and Method of Operating Same Using Phase Controlled Magnetic Anisotropy
Sandisk Technologies, Inc.
0 cites - US123639052025Memory Device Containing Composition-controlled Ferroelectric Memory Elements and Method of Making the Same
Sandisk Technologies, Inc.
0 cites - US123566272025Memory Device Containing Composition-controlled Ferroelectric Memory Elements and Method of Making the Same
Sandisk Technologies, Inc.
0 cites - US122258282025Voltage Controlled Magnetic Anisotropy (VCMA) Memory Devices Including Platinum Containing Layer in Contact with Free Layer
Sandisk Technologies, Inc.
0 cites - US119964622024Ferroelectric Field Effect Transistors Having Enhanced Memory Window and Methods of Making the Same
SANDISK TECHNOLOGIES LLC
0 cites - US118876402024Voltage-controlled Magnetic Anisotropy Memory Device Including an Anisotropy-enhancing Dust Layer and Methods for Forming the Same
WESTERN DIGITAL TECHNOLOGIES, Inc.
0 cites - US118897022024Voltage-controlled Magnetic Anisotropy Memory Device Including an Anisotropy-enhancing Dust Layer and Methods for Forming the Same
WESTERN DIGITAL TECHNOLOGIES, Inc.
0 cites - US118716792024Voltage-controlled Magnetic Anisotropy Memory Device Including an Anisotropy-enhancing Dust Layer and Methods for Forming the Same
WESTERN DIGITAL TECHNOLOGIES, Inc.
0 cites - US118391622023Magnetoresistive Memory Device Including a Plurality of Reference Layers
WESTERN DIGITAL TECHNOLOGIES, Inc.
0 cites - US115455062023Ferroelectric Field Effect Transistors Having Enhanced Memory Window and Methods of Making the Same
SANDISK TECHNOLOGIES LLC
0 cites