2 Patents
- US123426612025Method for Manufacturing a Substrate Comprising a Relaxed Ingan Layer and Substrate Thus Obtained for the Resumption of Growth of a LED Structure
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
0 cites - US123289752025Optoelectronic Semiconductor Structure Comprising a P-type Injection Layer Based on Ingan
Soitec
0 cites