16 Patents
- US125882482026Template for Nanosheet Source Drain Formation with Bottom Dielectric
Applied Materials, Inc.
0 cites - US125576362026Gate All Around Backside Power Rail Formation with Backside Dielectric Isolation Scheme
Applied Materials, Inc.
0 cites - 0 cites
- 0 cites
- US124023512025Gate All Around Device with Fully-depleted Silicon-on-insulator
Applied Materials, Inc.
0 cites - 0 cites
- 0 cites
- US123277612025Void-free Contact Trench Fill in Gate-all-around FET Architecture
APPLIED MATERIALS, Inc.
0 cites - 0 cites
- 0 cites
- 0 cites
- US121837982024Threshold Voltage Modulation for Gate-all-around FET Architecture
Applied Materials, Inc.
0 cites - 0 cites
- 0 cites
- 0 cites
- 0 cites