Patents/Inventors

Benjamin Chu-kung

Portland, ORUS21 patents

20 Patents

US125504012026
Doped STI to Reduce Source/drain Diffusion for Germanium NMOS Transistors
Intel Corporation
0 cites
US125433492026
Transistors with Ferroelectric Gates
Intel Corporation
0 cites
US125384702026
Structures and Methods for Memory Cells
Intel Corporation
0 cites
US121913952025
Dual Gate Control for Trench Shaped Thin Film Transistors
Intel Corporation
0 cites
US121838312024
Self-aligned Contacts for Thin Film Transistors
Intel Corporation
0 cites
US120094332024
Multi-dielectric Gate Stack for Crystalline Thin Film Transistors
Intel Corporation
0 cites
US119731432024
Source or Drain Structures for Germanium N-channel Devices
Intel Corporation
0 cites
US118944652024
Deep Gate-all-around Semiconductor Device Having Germanium or Group III-V Active Layer
Google LLC
0 cites
US118627152024
Vertical Tunneling Field-effect Transistors
Intel Corporation
0 cites
US118627282024
Dual Gate Control for Trench Shaped Thin Film Transistors
Intel Corporation
0 cites
US118430542023
Vertical Architecture of Thin Film Transistors
Intel Corporation
0 cites
US117424292023
Thin-film Transistors with Low Contact Resistance
Intel Corporation
0 cites
US117356702023
Non-selective Epitaxial Source/drain Deposition to Reduce Dopant Diffusion for Germanium NMOS Transistors
Intel Corporation
0 cites
US117217352023
Thin Film Transistors Having U-shaped Features
Intel Corporation
0 cites
US116997562023
Source/drain Diffusion Barrier for Germanium Nmos Transistors
Intel Corporation
0 cites
US116902152023
Self-aligned Bitline and Capacitor via Formation
Intel Corporation
0 cites
US116582222023
Thin Film Transistor with Charge Trap Layer
Intel Corporation
0 cites
US116371852023
Contact Stacks to Reduce Hydrogen in Semiconductor Devices
Intel Corporation
0 cites
US116265192023
Fabrication of Non-planar IGZO Devices for Improved Electrostatics
Intel Corporation
0 cites
US115750052023
Asymmetrical Semiconductor Nanowire Field-effect Transistor
Intel Corporation
0 cites