3 Patents
- US122835152025Method and Device to Reduce Epitaxial Defects Due to Contact Stress Upon a Semicondcutor Wafer
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US122119012025Semiconductor Device Having a Doped Fin Well
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120878412024Method of Manufacturing Gate Spacers with Stepped Sidewalls by Removing Vertical Portions of a Helmet Layer
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites