Patents/Inventors

Balasubramanian Pranatharthiharan

San Jose, CAUS21 patents

21 Patents

US126105872026
Backside Power Rail to Deep Vias
Applied Materials, Inc.
0 cites
US125882612026
Selective Deposition on Metals Using Porous Low-k Materials
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US125882482026
Template for Nanosheet Source Drain Formation with Bottom Dielectric
Applied Materials, Inc.
0 cites
US125576362026
Gate All Around Backside Power Rail Formation with Backside Dielectric Isolation Scheme
Applied Materials, Inc.
0 cites
US125573432026
Method of Ultra Thinning of Wafer
Applied Materials, Inc.
0 cites
US125385092026
Gate-all-around Transistors and Methods of Forming
Applied Materials, Inc.
0 cites
US124955822025
Self-aligned Wide Backside Power Rail Contacts to Multiple Transistor Sources
Applied Materials, Inc.
0 cites
US124647162025
NAND Cell Structure with Charge Trap Cut
Applied Materials, Inc.
0 cites
US123362942025
Gate-cut and Separation Techniques for Enabling Independent Gate Control of Stacked Transistors
International Business Machines Corporation
0 cites
US123102642025
Phase Change Memory Using Multiple Phase Change Layers and Multiple Heat Conductors
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US122373282025
Minimizing Shorting Between Finfet Epitaxial Regions
Adeia Semiconductor Solutions LLC
0 cites
US122373682025
Semiconductor Structures Including Middle-of-line (MOL) Capacitance Reduction for Self-aligned Contact in Gate Stack
Adeia Semiconductor Solutions LLC
0 cites
US121660422024
Stacked Nanosheet Gate-all-around Device Structures
International Business Machines Corporation
0 cites
US121366552024
Backside Electrical Contacts to Buried Power Rails
International Business Machines Corporation
0 cites
US121069692024
Substrate Thinning for a Backside Power Distribution Network
International Business Machines Corporation
0 cites
US120573712024
Semiconductor Device with Early Buried Power Rail (BPR) and Backside Power Distribution Network (BSPDN)
International Business Machines Corporation
0 cites
US120027582024
Backside Metal-insulator-metal (MIM) Capacitors Extending Through Backside Interlayer Dielectric (BILD) Layer or Semiconductor Layer and Partly Through Dielectric Layer
International Business Machines Corporation
0 cites
US119424262024
Semiconductor Structure Having Alternating Selective Metal and Dielectric Layers
International Business Machines Corporation
0 cites
US119159662024
Backside Power Rail Integration
International Business Machines Corporation
0 cites
US119087342024
Composite Interconnect Formation Using Graphene
International Business Machines Corporation
0 cites
US116643752023
Minimizing Shorting Between Finfet Epitaxial Regions
Tessera LLC
0 cites