Patents/Inventors

Ashish Verma Penumatcha

Beaverton, ORUS40 patents

37 Patents

US126158072026
Technologies for Transistors with a Ferroelectric Gate Dielectric
0 cites
US126105842026
Selective Growth of High-k Oxide on Channel of Gate-all-around Transistors
Intel Corporation
0 cites
US125882572026
2D Layered Gate Oxide
Intel Corporation
0 cites
US125816962026
Technologies for Transistors with a Ferroelectric Gate Dielectric
0 cites
US125751112026
Back-end-of-line 2D Memory Cell
Intel Corporation
0 cites
US124844572025
Differentially Programmable Magnetic Tunnel Junction Device and System Including Same
Intel Corporation
0 cites
US124329762025
Thin Film Transistors Having Strain-inducing Structures Integrated with 2D Channel Materials
Intel Corporation
0 cites
US124067132025
Probabilistic Computing Devices Based on Stochastic Switching in a Ferroelectric Field-effect Transistor
Intel Corporation
0 cites
US123962542025
Stacked 2D CMOS with Inter Metal Layers
Intel Corporation
0 cites
US123962172025
Encapsulation for Transition Metal Dichalcogenide Nanosheet Transistor and Methods of Fabrication
Intel Corporation
0 cites
US123693822025
Integrated Circuit Structures with Graphene Contacts
Intel Corporation
0 cites
US123494422025
Thin Film Transistors Having Semiconductor Structures Integrated with 2D Channel Materials
Intel Corporation
0 cites
US123494382025
Contact Gating for 2D Field Effect Transistors
Intel Corporation
0 cites
US123242042025
Transistors Including Two-dimensional Materials
Intel Corporation
0 cites
US123101012025
Gate Dielectrics for Complementary Metal Oxide Semiconductors Transistors and Methods of Fabrication
Intel Corporation
0 cites
US122782892025
TMD Inverted Nanowire Integration
Intel Corporation
0 cites
US122667202025
Transistors with Monocrystalline Metal Chalcogenide Channel Materials
Intel Corporation
0 cites
US122667122025
Transition Metal Dichalcogenide Nanosheet Transistors and Methods of Fabrication
Intel Corporation
0 cites
US122243092025
Capacitors with Built-in Electric Fields
Intel Corporation
0 cites
US121763882024
Transition Metal Dichalcogenide Nanowires and Methods of Fabrication
Intel Corporation
0 cites
US121661222024
Field-effect Transistor (FET) with Self-aligned Ferroelectric Capacitor and Methods of Fabrication
Intel Corporation
0 cites
US121258952024
Transition Metal Dichalcogenide (TMD) Layer Stack for Transistor Applications and Methods of Fabrication
Intel Corporation
0 cites
US121258932024
Piezo-resistive Transistor Based Resonator with Anti-ferroelectric Gate Dielectric
Intel Corporation
0 cites
US121131172024
Piezo-resistive Transistor Based Resonator with Ferroelectric Gate Dielectric
Intel Corporation
0 cites
US119800372024
Memory Cells with Ferroelectric Capacitors Separate from Transistor Gate Stacks
Intel Corporation
0 cites
US119359562024
TMD Inverted Nanowire Integration
Intel Corporation
0 cites
US119089502024
Charge-transfer Spacers for Stacked Nanoribbon 2D Transistors
Intel Corporation
0 cites
US119014002024
MFM Capacitor and Process for Forming Such
Intel Corporation
0 cites
US117697892023
MFM Capacitor with Multilayered Oxides and Metals and Processes for Forming Such
Intel Corporation
0 cites
US117424072023
Multilayer High-k Gate Dielectric for a High Performance Logic Transistor
Intel Corporation
0 cites
US116535022023
Fefet with Embedded Conductive Sidewall Spacers and Process for Forming the Same
Intel Corporation
0 cites
US116463742023
Ferroelectric Transistors to Store Multiple States of Resistances for Memory Cells
Intel Corporation
0 cites
US116463562023
Piezo-resistive Transistor Based Resonator with Anti-ferroelectric Gate Dielectric
Intel Corporation
0 cites
US116409842023
Transistor Device with (anti)ferroelectric Spacer Structures
Intel Corporation
0 cites
US116371912023
Piezo-resistive Transistor Based Resonator with Ferroelectric Gate Dielectric
Intel Corporation
0 cites
US116161302023
Transistor Device with Variously Conformal Gate Dielectric Layers
Intel Corporation
0 cites
US116056242023
Ferroelectric Resonator
Intel Corporation
0 cites