11 Patents
- US126220252026Silicon Carbide Transistor with Channel Counter-doping and Pocket-doping
Applied Materials, Inc.
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- US125576362026Gate All Around Backside Power Rail Formation with Backside Dielectric Isolation Scheme
Applied Materials, Inc.
0 cites - US124955822025Self-aligned Wide Backside Power Rail Contacts to Multiple Transistor Sources
Applied Materials, Inc.
0 cites - US124023512025Gate All Around Device with Fully-depleted Silicon-on-insulator
Applied Materials, Inc.
0 cites - US120741962024Gradient Doping Epitaxy in Superjunction to Improve Breakdown Voltage
APPLIED MATERIALS, Inc.
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