40 Patents
- US126107482026Selective Encapsulation for Metal Electrodes of Embedded Memory Devices
International Business Machines Corporation
0 cites - US125936152026MRAM Device with Wrap-around Top Electrode Contact
International Business Machines Corporation
0 cites - US125687722026MRAM with a Multi-component, Multi-layer Bottom Electrode
International Business Machines Corporation
0 cites - 0 cites
- US124647312025Layered Bottom Electrode Dielectric for Embedded MRAM
International Business Machines Corporation
0 cites - 0 cites
- 0 cites
- US124144802025MRAM Bottom Electrode Contact with Taper Profile
International Business Machines Corporation
0 cites - US123898032025Magnetoresistive Random-access Memory (MRAM) with Preserved Underlying Dielectric Layer
International Business Machines Corporation
0 cites - US123639132025Fabrication of Embedded Memory Devices Utilizing a Self Assembled Monolayer
International Business Machines Corporation
0 cites - 0 cites
- US123277702025Probe Pad with Built-in Interconnect Structure
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US123243582025Tall Bottom Electrode Structure in Embedded Magnetoresistive Random-access Memory
International Business Machines Corporation
0 cites - US122779602025Modified Top Electrode Contact for MRAM Embedding in Advanced Logic Nodes
International Business Machines Corporation
0 cites - US122725452025Embedded Metal Contamination Removal from BEOL Wafers
International Business Machines Corporation
0 cites - 0 cites
- US122198812025Dual Layer Top Contact for Magnetic Tunnel Junction Stack
International Business Machines Corporation
0 cites - 0 cites
- 0 cites
- 0 cites
- US121334732024Contact Structure Formation for Memory Devices
International Business Machines Corporation
0 cites - US121257902024Airgap Isolation for Back-end-of-the-line Semiconductor Interconnect Structure with Top Via
International Business Machines Corporation
0 cites - US121209632024Contact Structure Formation for Memory Devices
International Business Machines Corporation
0 cites - 0 cites
- US119551522024Dielectric Fill for Tight Pitch MRAM Pillar Array
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - 0 cites
- US119233112024Forming Self-aligned Multi-metal Interconnects
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US119107222024Subtractive Top via as a Bottom Electrode Contact for an Embedded Memory
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - 0 cites
- US118568782023High-density Resistive Random-access Memory Array with Self-aligned Bottom Electrode Contact
International Business Machines Corporation
0 cites - US118496472023Nonmetallic Liner Around a Magnetic Tunnel Junction
International Business Machines Corporation
0 cites - US118308072023Placing Top Vias at Line Ends by Selective Growth of via Mask from Line Cut Dielectric
International Business Machines Corporation
0 cites - US118126682023Pillar-based Memory Hardmask Smoothing and Stress Reduction
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US117789292023Selective Encapsulation for Metal Electrodes of Embedded Memory Devices
International Business Machines Corporation
0 cites - 0 cites
- US117440832023Fabrication of Embedded Memory Devices Utilizing a Self Assembled Monolayer
International Business Machines Corporation
0 cites - US116995922023Inverse Tone Pillar Printing Method Using Organic Planarizing Layer Pillars
International Business Machines Corporation
0 cites - 0 cites
- US116825582023Fabrication of Back-end-of-line Interconnects
International Business Machines Corporation
0 cites - US116212942023Embedding MRAM Device in Advanced Interconnects
International Business Machines Corporation
0 cites