Patents/Inventors

Aryadeep Mrinal

New TaipeiTW2 patents

3 Patents

US121991532025
High Voltage Edge Termination Structure for Power Semiconductor Devices
TAIWAN SEMICONDUCTOR CO., Ltd.
0 cites
US121549552024
High Voltage Edge Termination Structure for Power Semiconductor Devices and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR CO., Ltd.
0 cites
US120878312024
High Voltage Edge Termination Structure for Power Semiconductor Devices and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR CO., Ltd.
0 cites