5 Patents
- 0 cites
- US124603142025Silicon Carbide Substrate and Method of Growing Sic Single Crystal Boules
SICRYSTAL GmbH
0 cites - US121958782025Sic Crystals with an Optimal Orientation of Lattice Planes for Fissure Reduction and Method of Producing Same
Sicrystal GmbH
0 cites - US117812452023Silicon Carbide Substrate and Method of Growing Sic Single Crystal Boules
SICRYSTAL GmbH
0 cites - US116241242023Silicon Carbide Substrate and Method of Growing Sic Single Crystal Boules
SICRYSTAL GmbH
0 cites