4 Patents
- US124084172025Forksheet Semiconductor Structure Including at Least One Bipolar Junction Transistor and Method
Globalfoundries U.S. Inc.
0 cites - US119161362024Lateral Bipolar Junction Transistors Including a Graded Silicon-germanium Intrinsic Base
Globalfoundries U.S. Inc.
0 cites - 0 cites
- US116463612023Electrical Isolation Structure Using Reverse Dopant Implantation from Source/drain Region in Semiconductor Fin
Globalfoundries U.S. Inc.
0 cites