Anupama Bowonder

12 Patents

• US124842722025

  Source or Drain Structures with Relatively High Germanium Content

  Intel Corporation

  0 cites
• US124396402025

  Reduced Contact Resistivity with PMOS Germanium and Silicon Doped with Boron Gate All Around Transistors

  Intel Corporation

  0 cites
• US124262992025

  Fin Shaping and Integrated Circuit Structures Resulting Therefrom

  Intel Corporation

  0 cites
• US122374202025

  Fin Smoothing and Integrated Circuit Structures Resulting Therefrom

  Intel Corporation

  0 cites
• US120211492024

  Fin Smoothing and Integrated Circuit Structures Resulting Therefrom

  Intel Corporation

  0 cites
• US119844492024

  Channel Structures with Sub-fin Dopant Diffusion Blocking Layers

  Intel Corporation

  0 cites
• US119234122024

  Sub-fin Leakage Reduction for Template Strained Materials

  Intel Corporation

  0 cites
• US119014572024

  Fin Shaping and Integrated Circuit Structures Resulting Therefrom

  Intel Corporation

  0 cites
• US117570372023

  Epitaxial Oxide Plug for Strained Transistors

  Intel Corporation

  0 cites
• US117356302023

  Integrated Circuit Structures with Source or Drain Dopant Diffusion Blocking Layers

  Intel Corporation

  0 cites
• US116827312023

  Fin Smoothing and Integrated Circuit Structures Resulting Therefrom

  Intel Corporation

  0 cites
• US116006962023

  Sub-fin Leakage Reduction for Template Strained Materials

  Intel Corporation

  0 cites