Patents/Inventors

Anthony K. Stamper

Burlington, VTUS25 patents

28 Patents

US123362852025
Field Effect Transistor with Shallow Trench Isolation Features Within Source/drain Regions
GLOBALFOUNDRIES U.S. Inc.
0 cites
US123242272025
Heterojunction Bipolar Transistor with Buried Trap Rich Isolation Region
GLOBALFOUNDRIES U.S. Inc.
0 cites
US122439232025
Contact-over-active-gate Transistor Structures with Contacts Landed on Enlarged Gate Portions
Globalfoundries U.S. Inc.
0 cites
US121703132024
Heterojunction Bipolar Transistor with Buried Trap Rich Isolation Region
GLOBALFOUNDRIES U.S. Inc.
0 cites
US121426862024
Field Effect Transistor
GLOBALFOUNDRIES U.S. Inc.
0 cites
US121193522024
IC Structure Including Porous Semiconductor Layer in Bulk Substrate Adjacent Trench Isolation
Globalfoundries U.S. Inc.
0 cites
US120275802024
Semiconductor on Insulator Wafer with Cavity Structures
GLOBALFOUNDRIES U.S. Inc.
0 cites
US120275822024
IC Structure Including Porous Semiconductor Layer Under Trench Isolation
GLOBALFOUNDRIES U.S. Inc.
0 cites
US118761232024
Heterojunction Bipolar Transistors with Stress Material for Improved Mobility
Globalfoundries U.S. Inc.
0 cites
US118481922023
Heterojunction Bipolar Transistor with Emitter Base Junction Oxide Interface
GLOBALFOUNDRIES U.S. Inc.
0 cites
US118239482023
Bulk Wafer Switch Isolation
GLOBALFOUNDRIES U.S. Inc.
0 cites
US118174792023
Transistor with Air Gap Under Raised Source/drain Region in Bulk Semiconductor Substrate
Globalfoundries U.S. Inc.
0 cites
US117913342023
Heterojunction Bipolar Transistor with Buried Trap Rich Isolation Region
GLOBALFOUNDRIES U.S. Inc.
0 cites
US117642252023
Field Effect Transistor with Shallow Trench Isolation Features Within Source/drain Regions
GLOBALFOUNDRIES U.S. Inc.
0 cites
US117495592023
Bulk Substrates with a Self-aligned Buried Polycrystalline Layer
Globalfoundries U.S. Inc.
0 cites
US117495992023
Dual Thickness Fuse Structures
GLOBALFOUNDRIES Inc.
0 cites
US117497172023
Transistor with Embedded Isolation Layer in Bulk Substrate
GLOBALFOUNDRIES U.S. Inc.
0 cites
US117283482023
Vertically Stacked Field Effect Transistors
GLOBALFOUNDRIES U.S. Inc.
0 cites
US117217192023
Heterojunction Bipolar Transistor with Buried Trap Rich Isolation Region
GLOBALFOUNDRIES U.S. Inc.
0 cites
US117106552023
Integrated Circuit Structure with Semiconductor-based Isolation Structure and Methods to Form Same
Globalfoundries U.S. Inc.
0 cites
US116770002023
IC Structure Including Porous Semiconductor Layer Under Trench Isolations Adjacent Source/drain Regions
Globalfoundries U.S. Inc.
0 cites
US116581772023
Semiconductor Device Structures with a Substrate Biasing Scheme
Globalfoundries U.S. Inc.
0 cites
US116398952023
Device Including Optofluidic Sensor with Integrated Photodiode
GLOBALFOUNDRIES U.S. Inc.
0 cites
US116370682023
Thermally and Electrically Conductive Interconnects
Globalfoundries U.S. Inc.
0 cites
US116057102023
Transistor with Air Gap Under Source/drain Region in Bulk Semiconductor Substrate
Globalfoundries U.S. Inc.
0 cites
US115748632023
Local Interconnect Layer with Device Within Second Dielectric Material, and Related Methods
Globalfoundries U.S. Inc.
0 cites
US115694052023
Photodetectors with a Lateral Composition Gradient
Globalfoundries U.S. Inc.
0 cites
US115455482023
Gate Contacts with Airgap Isolation
Globalfoundries U.S. Inc.
0 cites