Patents/Inventors

Angelique Raley

Albany, NYUS25 patents

21 Patents

US125819212026
Multiple Patterning with Selective Mandrel Formation
TOKYO ELECTRON LIMITED
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US125435172026
System and Method for Semiconductor Structure
TOKYO ELECTRON LIMITED
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US124943692025
Extreme Ultraviolet Lithography Patterning Method
Tokyo Electron Limited
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US124697012025
Patterning Features with Metal Based Resists
Tokyo Electron Limited
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US124380062025
Metal Hard Mask Integration
Tokyo Electron Limited
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US123343912025
Method for Patterning a Substrate Using Photolithography
Tokyo Electron Limited
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US123225972025
Pitch Scaling in Microfabrication
Tokyo Electron Limited
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US123082502025
Pre-etch Treatment for Metal Etch
Tokyo Electron Limited
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US121005912024
Photoactive Metal-based Hard Mask Integration
Tokyo Electron Limited
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US120805992024
Methods for Forming Self-aligned Contacts Using Spin-on Silicon Carbide
Tokyo Electron Limited
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US120092112024
Method for Highly Anisotropic Etching of Titanium Oxide Spacer Using Selective Top-deposition
Tokyo Electron Limited
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US119786312024
Forming Contact Holes with Controlled Local Critical Dimension Uniformity
Tokyo Electron Limited
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US119159312024
Extreme Ultraviolet Lithography Patterning Method
Tokyo Electron Limited
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US118827762024
In-situ Encapsulation of Metal-insulator-metal (MIM) Stacks for Resistive Random Access Memory (RERAM) Cells
Tokyo Electron Limited
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US118374712023
Methods of Patterning Small Features
Tokyo Electron Limited
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US117567902023
Method for Patterning a Dielectric Layer
Tokyo Electron Limited
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US117422412023
ALD (atomic Layer Deposition) Liner for via Profile Control and Related Applications
TOKYO ELECTRON LIMITED
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US117215782023
Split Ash Processes for via Formation to Suppress Damage to Low-k Layers
Tokyo Electron Limited
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US116886042023
Method for Using Ultra Thin Ruthenium Metal Hard Mask for Etching Profile Control
Tokyo Electron Limited
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US116580382023
Method for Dry Etching Silicon Carbide Films for Resist Underlayer Applications
Tokyo Electron Limited
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US116211642023
Method for Critical Dimension (CD) Trim of an Organic Pattern Used for Multi-patterning Purposes
Tokyo Electron Limited
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