Patents/Inventors

Andrew Metz

Albany, NYUS13 patents

14 Patents

US124008722025
Sacrificial Capping Layer for Gate Protection
Tokyo Electron Limited
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US123548422025
In-situ Focus Ring Coating
Tokyo Electron Limited
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US123410092025
Variable Hardness Amorphous Carbon Mask
TOKYO ELECTRON LIMITED
0 cites
US123343562025
Plasma Etching Tools and Systems
Tokyo Electron Limited
0 cites
US122886922025
Method of Forming a FET Structure by Selective Deposition of Film on Source/drain Contact
TOKYO ELECTRON LIMITED
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US122665332025
Sacrificial Capping Layer for Contact Etch
TOKYO ELECTRON LIMITED
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US122665342025
Forming a Semiconductor Device Using a Protective Layer
Tokyo Electron Limited
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US122119112025
Recessed Contact Structures and Methods
Tokyo Electron Limited
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US121912022025
Contact Openings in Semiconductor Devices
Tokyo Electron Limited
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US120805992024
Methods for Forming Self-aligned Contacts Using Spin-on Silicon Carbide
Tokyo Electron Limited
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US120401762024
Technologies for High Aspect Ratio Carbon Etching with Inserted Charge Dissipation Layer
Tokyo Electron Limited
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US119786312024
Forming Contact Holes with Controlled Local Critical Dimension Uniformity
Tokyo Electron Limited
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US119617352024
Cyclic Plasma Processing
Tokyo Electron Limited
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US116519672023
Non-atomic Layer Deposition (ALD) Method of Forming Sidewall Passivation Layer During High Aspect Ratio Carbon Layer Etch
Tokyo Electron Limited
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