Patents/Inventors

Andrew M. Greene

Slingerlands, NYUS41 patents

31 Patents

US126220372026
Gate Cut Subsequent to Replacement Gate
International Business Machines Corporation
0 cites
US125987762026
Nanosheet Epitaxy with Full Bottom Isolation
International Business Machines Corporation
0 cites
US125686832026
Single Stack Dual Channel Gate-all-around Nanosheet with Strained PFET and Bottom Dielectric Isolation NFET
International Business Machines Corporation
0 cites
US125686522026
Forming Gate All Around Device with Silicon-germanium Channel
International Business Machines Corporation
0 cites
US125637762026
Forming Source/drain Contact in a Tight Tip-to-tip Space
International Business Machines Corporation
0 cites
US124777792025
Gate-all-around Field-effect-transistor with Wrap-around-channel Inner Spacer
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US124531702025
Integration of Nanosheets with Bottom Dielectric Isolation and Ideal Diode
International Business Machines Corporation
0 cites
US124329602025
Wraparound Contact with Reduced Distance to Channel
International Business Machines Corporation
0 cites
USRE0506132025
Finfet Gate Cut After Dummy Gate Removal
Adeia Semiconductor Solutions LLC
0 cites
US124263142025
Strain Generation and Anchoring in Gate-all-around Field Effect Transistors
International Business Machines Corporation
0 cites
US124023912025
Stressed Material Within Gate Cut Region
International Business Machines Corporation
0 cites
US123175552025
Gate-all-around Nanosheet Field Effect Transistor Integrated with Fin Field Effect Transistor
International Business Machines Corporation
0 cites
US123100542025
Late Replacement Bottom Isolation for Nanosheet Devices
International Business Machines Corporation
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US122552042025
Vertical FET Replacement Gate Formation with Variable Fin Pitch
INTERNATIONAL BUSINESS MACHINES CORPORATION
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US122496432025
Stacked Planar Field Effect Transistors with 2D Material Channels
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US122243122025
Field Effect Transistors with Bottom Dielectric Isolation
International Business Machines Corporation
0 cites
US121764042024
Wrap-around Contact for Nanosheet Device
International Business Machines Corporation
0 cites
US121366562024
Semiconductor Structure Having Two-dimensional Channel
International Business Machines Corporation
0 cites
US121007462024
Gate-all-around Field Effect Transistor with Bottom Dielectric Isolation
International Business Machines Corporation
0 cites
US120741652024
Gate Cut with Integrated Etch Stop Layer
Tessera LLC
0 cites
US119905082024
Dual Step Etch-back Inner Spacer Formation
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US119425572024
Nanosheet Transistor with Enhanced Bottom Isolation
International Business Machines Corporation
0 cites
US119087432024
Planar Devices with Consistent Base Dielectric
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US118944362024
Gate-all-around Monolithic Stacked Field Effect Transistors Having Multiple Threshold Voltages
International Business Machines Corporation
0 cites
US118943612024
Co-integrated Logic, Electrostatic Discharge, and Well Contact Devices on a Substrate
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US117769572023
Gate Cut with Integrated Etch Stop Layer
TESSERA LLC
0 cites
US117423502023
Metal Gate N/P Boundary Control by Active Gate Cut and Recess
International Business Machines Corporation
0 cites
US117107682023
Hybrid Diffusion Break with EUV Gate Patterning
International Business Machines Corporation
0 cites
US116886322023
Semiconductor Device with Linerless Contacts
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US116887412023
Gate-all-around Devices with Isolated and Non-isolated Epitaxy Regions for Strain Engineering
International Business Machines Corporation
0 cites
US115520772023
Gate Cut with Integrated Etch Stop Layer
TESSERA LLC
0 cites