3 Patents
- US123728722025Extreme Ultraviolet (EUV) Lithography Using an Intervening Layer or a Multi-layer Stack with Varying Mean Free Paths for Secondary Electron Generation
LAM RESEARCH CORPORATION
0 cites - US120625382024Atomic Layer Etch and Selective Deposition Process for Extreme Ultraviolet Lithography Resist Improvement
Lam Research Corporation
0 cites - 0 cites