9 Patents
- US124179442025Formation of Trench Silicide Source or Drain Contacts Without Gate Damage
International Business Machines Corporation
0 cites - US121007442024Wrap Around Contact Process Margin Improvement with Early Contact Cut
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US119903422024Metal Cut Patterning and Etching to Minimize Interlayer Dielectric Layer Loss
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - 0 cites
- US118806752024Systems and Methods for Providing Event Attribution in Software Application
SPLIT SOFTWARE, Inc.
0 cites - US118761362024Transistor Having Wrap-around Source/drain Contacts and Under-contact Spacers
International Business Machine Corporation
0 cites - 0 cites
- US117570122023Source and Drain Contact Cut Last Process to Enable Wrap-around-contact
International Business Machines Corporation
0 cites - US116950572023Protective Bilayer Inner Spacer for Nanosheet Devices
International Business Machines Corporation
0 cites